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High-temperature superconducting edge-type Josephson junctions with modified interface barriers

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6 Author(s)
Satoh, T. ; Fundamental Res. Labs., NEC Corp., Ibaraki, Japan ; Jian-Guo Wen ; Hidaka, M. ; Tahara, Shuichi
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This paper describes recent results on the fabrication, electrical characteristics, and microstructure of high-temperature superconducting edge-type Josephson junctions with modified interface barriers. The barriers are formed by surface modification of the YBa2Cu3O7-δ base layer. This process involves structural and chemical modification by ion irradiation and crystallization by annealing. The junctions showed resistively and capacitively shunted junction-like current-voltage characteristics and excellent uniformity. The spread in the critical current for one hundred junctions was smaller than 1σ=10% at 4.2 K. The uniformity is now approaching 1σ=5%. The junction characteristics have remained the same after two-year room-temperature storage. They also showed no change after high-temperature processing at about 700°C. High-resolution transmission electron microscopy revealed that both the crystal structure and chemical composition in relatively thick barriers are different from those of YBa2Cu3O7-δ

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Applied Superconductivity, IEEE Transactions on  (Volume:11 ,  Issue: 1 )