By Topic

Strain and strain relief in Gd(0001) films on Mo(112)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Komescu, T. ; Dept. of Phys. & Astron., Nebraska Univ., Lincoln, NE, USA ; Waldfried, C. ; Dowben, P.A.

The electronic structure of strained and unstrained Gd(0001) has been studied with spin-polarized photoemission spectroscopy and spin-polarized inverse photoemission spectroscopy. In this work, we observed that relaxation of the expansively strained in-plane crystal lattice constant, of Gd(0001) on Mo(112), significantly diminishes the differences in the electronic structure from that observed for Gd(0001) grown on W(110). The defects that are incorporated in the Gd films, with increasing film thickness, lead to an in-plane lattice relaxation. Such thickness dependent strain relief results a loss of net polarization for Gd(0001) grown on Mo(112) compared to the relatively unstrained Gd(0001) films grown on W(110).

Published in:

Magnetics, IEEE Transactions on  (Volume:36 ,  Issue: 5 )