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Modeling and experiment of transport properties of spin-valves with synthetic antiferromagnet

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5 Author(s)
Chen, Jian ; Seagate Technol., Minneapolis, MN, USA ; Mao, Sining ; Fernandez-de-Castro, J. ; Choy, Tat-Sang
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Both band structure calculations and experiments show that the giant-magnetoresistance (GMR) of a spin-valve with a synthetic-antiferromagnetic pinned layer is smaller than that with a single pinned layer. This smaller GMR is shown to come from the s-d scattering in the Ru layer and part of the pinned layer that has the opposite moment direction. Half of the synthetic-antiferromagnet does not contribute to the GMR and only shunts the current

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Magnetics, IEEE Transactions on  (Volume:36 ,  Issue: 5 )