By Topic

High frequency characterization of gate resistance in RF MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Yuhua Cheng ; Conexant Systems, Newport Beach, CA, USA ; M. Matloubian

The gate resistances (R/sub g/) of MOSEETs with various geometries have been characterized at various bias conditions at high frequency (HF). The results show that R/sub g/ decreases when either channel length (L/sub f/) or per-finger-width (W/sub f/) increases before reaching a critical L/sub f/ or W/sub f/, and then starts to increase as L/sub f/ or W/sub f/ continues to increase. The irregular geometry dependence of R/sub g/ is caused by the combined distributed effects in both the gate and channel at HF. Stronger contribution from the distributed channel to the effective R/sub g/ is observed in the saturation region of devices with longer channel length (L/sub f/) at lower gate bias (V/sub gs/). The results show that an optimized design of the per-finger-width is necessary for an rf MOSFET to achieve the lowest effective R/sub g/, which is desirable in rf applications.

Published in:

IEEE Electron Device Letters  (Volume:22 ,  Issue: 2 )