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Nonsilicide source/drain pixel for 0.25-/spl mu/m CMOS image sensor

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6 Author(s)
Dun-Nian Yaung ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Shou-Gwo Wuu ; Yean-Kuen Fang ; Wang, C.S.
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A nonsilicide source/drain pixel is proposed for high performance 0.25-/spl mu/m CMOS image sensor. By using organic material spin coat and etch back, silicide is only formed on poly gate which can be used as interconnection, not for source/drain region that solve the optical opaqueness and undesirably large junction leakage of silicide. The performance of MOSFET changes little due to the high sheet resistance of nonsilicide source/drain. With H/sub 2/ annealing and double ion implanted source/drain junction, the dark current can be further reduced. The novel pixel (three transistors, 3.3 /spl mu/m/spl times/3.3 /spl mu/m, fill factor: 28%) shows low dark current (less than 0.5 fA per pixel at 25/spl deg/C) and high photoresponse.

Published in:

Electron Device Letters, IEEE  (Volume:22 ,  Issue: 2 )

Date of Publication:

Feb. 2001

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