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Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging

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10 Author(s)
Simin, G. ; Dept. of Electr. & Comput. Eng., South Carolina Univ., Columbia, SC, USA ; Hu, X. ; Ilinskaya, N. ; Zhang, J.
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We report on AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor (HFET) over SiC substrates with peripheries from 0.15 to 6 mm. These multigate devices with source interconnections were fabricated using a novel oxide-bridging approach. The saturation current was as high as 5.1 A for a 6 mm wide device with a gate leakage of 1 μA/cm2 for 1.5 μm gate length in a 5 μm source-drain opening. The cutoff frequency of around 8 GHz was practically independent of the device periphery. Large-signal output rf-power as high as 2.88 W/mm was measured at 2 GHz. Both the saturation current and the rf-power scaled nearly linearly with the gate width.

Published in:

Electron Device Letters, IEEE  (Volume:22 ,  Issue: 2 )