Scheduled System Maintenance:
On April 27th, single article purchases and IEEE account management will be unavailable from 2:00 PM - 4:00 PM ET (18:00 - 20:00 UTC).
We apologize for the inconvenience.
By Topic

Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
10 Author(s)
Simin, G. ; Dept. of Electr. & Comput. Eng., South Carolina Univ., Columbia, SC, USA ; Hu, X. ; Ilinskaya, N. ; Zhang, J.
more authors

We report on AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor (HFET) over SiC substrates with peripheries from 0.15 to 6 mm. These multigate devices with source interconnections were fabricated using a novel oxide-bridging approach. The saturation current was as high as 5.1 A for a 6 mm wide device with a gate leakage of 1 μA/cm2 for 1.5 μm gate length in a 5 μm source-drain opening. The cutoff frequency of around 8 GHz was practically independent of the device periphery. Large-signal output rf-power as high as 2.88 W/mm was measured at 2 GHz. Both the saturation current and the rf-power scaled nearly linearly with the gate width.

Published in:

Electron Device Letters, IEEE  (Volume:22 ,  Issue: 2 )