By Topic

1.5 V 1.8 GHz bandpass amplifier

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Chan, K.-L. ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore ; Do, M.A. ; Yeo, K.S. ; Ma, J.-G.

To have a fully integrated communication system in CMOS, a CMOS bandpass amplifier which combines the functions of low noise amplifier (LNA) and bandpass filter (BPF) is necessary. In a conventional bandpass amplifier, a Q-enhancement circuit is required to compensate for the resistive loss in the integrated inductor. The Q-enhancement circuit, however, being active, increases the power consumption (Pd) and noise figure (NF) of the system. In the paper, a new bandpass amplifier has been proposed which can achieve the required Q without an additional Q-enhancement circuit. Comparison with other recent designs shows that the proposed amplifier has the lowest Pd and the best noise performance. Based on the CSM 0.25 μm CMOS process, the bandpass amplifier has a gain of 25.3 dB, a Q of 30, an NF of 3.56 dB and a Pd of 35.7 mW at 1.8 GHz

Published in:

Circuits, Devices and Systems, IEE Proceedings -  (Volume:147 ,  Issue: 6 )