Referenced Items are not available for this document.
We studied the influence of planar δ-doping on the parameters of Schottky diodes. It is shown that a δ-layer with the same type of conductivity as a base semiconductor material has no significant influence on the diode parameters. Changing the potential barrier shape after insertion of the δ-doped layer influences the diode current only slightly. Significant changes were found for Schottky diodes with δ-doped layers of opposite type conductivity compared with the base semiconductor. The resulting barriers are higher and depend on both the δ-doped layer position and the doping concentration
Published in:
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Date of Conference: 2000
- Page(s):
- 391 - 394
- Meeting Date :
- 16 Oct 2000-18 Oct 2000
- Print ISBN:
- 0-7803-5939-9
- INSPEC Accession Number:
- 6893467
- Conference Location :
- Smolenice
- Digital Object Identifier :
- 10.1109/ASDAM.2000.889528
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
