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Advanced silicon diode temperature sensors with minimized self-heating and noise for cryogenic applications

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5 Author(s)
Shwarts, Yu.M. ; Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine ; Sokolov, V.N. ; Shwarts, M.M. ; Fedorov, I.A.
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Original results are presented on the development of new stable and reproducible silicon diode temperature sensors (DTSs), characterized by high interchangeability, with the temperature response curve controlled by the current. For these sensors, in a broadened range of temperatures 4.2-500 K, the influence of Joule heating and p-n junction noise on the accuracy of temperature measurement has been minimized. The results of theoretical and experimental investigations are presented concerning the contributions of different currents to the sensor characteristics that allow the DTS performance to be optimized. The limiting values of temperature measurement uncertainty for the DTSs have been established. The advanced DTSs are intended for the range of low to middle temperatures and have record technical characteristics for cryogenic applications

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Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

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