Referenced Items are not available for this document.
Original results are presented on the development of new stable and reproducible silicon diode temperature sensors (DTSs), characterized by high interchangeability, with the temperature response curve controlled by the current. For these sensors, in a broadened range of temperatures 4.2-500 K, the influence of Joule heating and p-n junction noise on the accuracy of temperature measurement has been minimized. The results of theoretical and experimental investigations are presented concerning the contributions of different currents to the sensor characteristics that allow the DTS performance to be optimized. The limiting values of temperature measurement uncertainty for the DTSs have been established. The advanced DTSs are intended for the range of low to middle temperatures and have record technical characteristics for cryogenic applications
Published in:
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Date of Conference: 2000
- Page(s):
- 351 - 354
- Meeting Date :
- 16 Oct 2000-18 Oct 2000
- Print ISBN:
- 0-7803-5939-9
- INSPEC Accession Number:
- 6893457
- Conference Location :
- Smolenice
- Digital Object Identifier :
- 10.1109/ASDAM.2000.889518
- Product Type:
- Conference Publications
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