By Topic

Modeling and characterization of microwave p-i-n photodiode

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Chizh, A.L. ; Inst. of Electron., Acad. of Sci., Minsk, Byelorussia ; Malyshev, S.A.

A numerical one-dimensional drift-diffusion model of the p-i-n photodiode based on the InP/InGaAs/InGaAsP heterostructure which takes into account the influence of an external electric circuit and parasitic elements is presented. S11 parameters of the photodiode are theoretically and experimentally investigated under illumination and in the frequency range up to 4 GHz. The theoretical data well correspond to the measured characteristics of the photodiode. This model can be used in the design of p-i-n photodiodes operating in microwave circuits

Published in:

Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

Date of Conference: