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An integrated 16/spl times/16 PVDF pyroelectric sensor array

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4 Author(s)
Binnie, T.David ; Sch. of Eng., Napier Polytech. of Edinburgh, UK ; Weller, H.J. ; Zhiqun He ; Setiadi, D.

This paper presents a fully integrated PVDF-on-silicon pyroelectric sensor array. The pyroelectric sensor has two main features: a subpixel low noise charge amplifier and a self-absorbing layered structure. The integrated low noise charge amplifier is implemented in a standard CMOS process technology. It is located directly under the sensing structure, maximizing the pixel fill factor. The self-absorbing pyroelectric sensor is a three-layer stack, consisting of a conductive polymer as an absorber layer and front electrode, a thin PVDF film as the pyroelectric material, and a rear metal layer acting as a reflector layer and rear electrode. The manufacture of the pyroelectric sensor array requires five maskless post-CMOS processing steps and is compatible with any n-well, double metal, double polysilicon, CMOS process. The array has an average pixel voltage sensitivity of 2200 V/W at 100 Hz, an NEP of 2.4/spl times/10/sup -11/ W//spl radic/Hz at 100 Hz, and a specific detectivity of 4.4/spl times/10/sup 8/ cm /spl radic/Hz/W at 100 Hz.

Published in:

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on  (Volume:47 ,  Issue: 6 )

Date of Publication:

Nov. 2000

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