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3 Author(s)
White, M.H. ; Dept. of Electr. Eng., Lehigh Univ., Bethlehem, PA, USA ; Adams, D.A. ; Jiankang Bu

Advancements in scaling gate insulators for MOS transistors permit low-voltage, silicon-oxide-nitride-silicon (SONOS) nonvolatile semiconductor memories (NVSMs) for a wide range of applications. The continued scaling of SONOS devices offers improved performance with a small cell size, single-level polysilicon with low voltage, fast erase/write, improved memory retention, increased endurance, and radiation hardness. In this article, we discuss scaled SONOS devices, SONOS memory technology, and some SONOS NVSM applications

Published in:

Circuits and Devices Magazine, IEEE  (Volume:16 ,  Issue: 4 )