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Low-temperature sensitive, compressively strained InGaAsP active (/spl lambda/=0.78-0.85 μm) region diode lasers

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3 Author(s)
Tansu, N. ; Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA ; Zhou, D. ; Mawst, L.J.

This letter reports comparative studies between (Al)GaAs versus InGaAsP active region edge-emitting semiconductor lasers for emission wavelength in the IR regime (/spl lambda/=0.78-0.85 μm). High characteristic temperature T0(200 K) and T1 (450 K) edge-emitting diode lasers have been demonstrated by using the compressively strained (/spl Delta/a/a=0,6%) Al-free (InGaAsP) active region with an emission wavelength of 0.85 μm. The high T0 and T1 a result of low active-layer carrier leakage, will be beneficial for high-temperature and high-power operation. Implementation for InGaAsP-active VCSEL's with compressively strained InGaAsP-active layers and conventional DBR's is also discussed.

Published in:

Photonics Technology Letters, IEEE  (Volume:12 ,  Issue: 6 )