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Low-distortion CMOS complementary class E RF tuned power amplifiers

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2 Author(s)
S. Hung-Lung Tu ; Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK ; C. Toumazou

A low distortion tuned power amplifier which is suitable for integrated circuit implementation is proposed. The amplifier is a complementary class-E tuned power amplifier because of both P-type and N-type transistors are employed to achieve a highly symmetrical topology, thereby reducing the significant distortion in the output signal of the conventional single-ended class-E power amplifier. In this paper, a complementary class-E power amplifier is presented together with HSPICE simulation results

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IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications  (Volume:47 ,  Issue: 5 )