Referenced Items are not available for this document.
A 40-nm-gate-length ultrathin-body (UTB) nMOSFET is presented with 20-nm body thickness and 2.4-nm gate oxide. The UTB structure eliminates leakage paths and is an extension of a conventional SOI MOSFET for deep-sub-tenth micron CMOS. Simulation shows that the UTB SOI MOSFET can be scaled down to 18-nm gate length with <5 nm UTB. A raised poly-Si S/D process is employed to reduce the parasitic series resistance.
Published in:
Electron Device Letters, IEEE
(Volume:21
,
Issue:
5
)
Date of Publication: May 2000
- Page(s):
- 254 - 255
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 6607173
- Digital Object Identifier :
- 10.1109/55.841313
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- May 2000
- Sponsored by :
- IEEE Electron Devices Society
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