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An analytical solution to a double-gate MOSFET with undoped body

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1 Author(s)
Yuan Taur ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

A one-dimensional (1-D) analytical solution is derived for an undoped (or lightly-doped) double-gate MOSFET by incorporating only the mobile charge term in Poisson's equation. The solution gives closed forms of band bending and volume inversion as a function of silicon thickness and gate voltage. A threshold criterion is derived which serves to quantify the gate work function requirements for a double-gate CMOS.

Published in:

IEEE Electron Device Letters  (Volume:21 ,  Issue: 5 )