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Deep submicrometer SOI MOSFET drain current model including series resistance, self-heating and velocity overshoot effects

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4 Author(s)
Roldan, J.B. ; Dept. de Electron. y Tecnologia de Computadores, Granada Univ., Spain ; Gamiz, F. ; López-Villanueva, J.A. ; Cartujo-Cassinello, P.

We have developed a new analytical ultrashort channel SOI MOSFET for circuit simulation where the effects of series resistance, self-heating and velocity overshoot are included. We have reproduced experimental measurements validating our model. Its simplicity allowed us to study the contribution of each effect separately in an easy way.

Published in:

Electron Device Letters, IEEE  (Volume:21 ,  Issue: 5 )