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Frequency multiplier measurements on heterostructure barrier varactors on a copper substrate

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7 Author(s)
L. Dillner ; Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden ; W. Strupinski ; S. Hollung ; C. Mann
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We have fabricated heterostructure barrier varactors (HBV) on a copper substrate, which offers reduced spreading resistance, and improved thermal conductivity compared to an InP substrate. The devices are fabricated without degrading the electrical characteristics. The three-barrier HBV material grown by MOVPE has a leakage current of only 0.1 μA/μm2 at 19 V. The maximum capacitance is 0.54 fF/μm2. In a frequency tripler experiment a maximum output power of 7.1 mW was generated at 221 GHz with a flange-to-flange efficiency of 7.9%.

Published in:

IEEE Electron Device Letters  (Volume:21 ,  Issue: 5 )