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Design of low-distortion CMOS Class E power amplifier for wireless communications

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2 Author(s)
S. H. -L. Tu ; Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK ; C. Toumazou

This paper describes a low-distortion Class E power amplifier which is suitable for integrated circuit implementation. Both N-type and P-type transistors are employed to achieve a balanced circuit operation thereby reducing the significant distortion of the conventional Class E power amplifier. The power amplifier operates at 1.8 GHz and is simulated with a 0.6-μm CMOS process at a supply voltage of 2.5 V

Published in:

Electronics, Circuits and Systems, 1999. Proceedings of ICECS '99. The 6th IEEE International Conference on  (Volume:3 )

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