By Topic

Low-voltage high driving capability CMOS buffer used in MEMS interface circuits

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Yajun Ha ; Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore ; M. F. Li ; Ai Qun Liu

A class-AB low voltage high driving capability CMOS buffer amplifier using improved quasi-complementary output stage and error amplifiers with adaptive loads is developed. Improved quasi-complementary output stage makes it more suitable for low voltage applications, while adaptive load in error amplifier is used to increase the driving capability and reduce the sensitivity of the quiescent current to process variation. The circuit has been fabricated in 0.8 μm CMOS process. With 300 Ω load in a ±1.5 V supply, its output swing is 2.42 V. The mean value of quiescent current for eight samples is 204 μA, with the worst deviation of 17%

Published in:

Electronics, Circuits and Systems, 1999. Proceedings of ICECS '99. The 6th IEEE International Conference on  (Volume:3 )

Date of Conference: