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Evaluation of the yield impact of epitaxial defects on advanced semiconductor technologies

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4 Author(s)
Williams, R. ; Intel Corp., Rio Rancho, NM ; Chen, W. ; Akbulut, M. ; Tong, T.X.

The SPITB1 defect inspection system was used to inspect epitaxial wafers for an advanced semiconductor manufacturing process to distinguish particles from epitaxial defects (e.g., stacking faults, epi-spikes, mounds, hillocks, and pits) using real-time defect classification (RTDC). The project results indicate that the enhanced defect sensitivity, better capture rate, and the RTDC capabilities of the SPI inspection system can provide a significant improvement in the current defect inspection capabilities for epitaxial wafers. Historical results, from in-line defect inspections on product wafers, have shown that epitaxial defects can have a significant impact on the product yields of advanced semiconductor technologies

Published in:

Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on

Date of Conference: