By Topic

Composition and thermal stability of chemically formed SiO2 oxides

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
G. Bernhardt ; Lab. for Surface Sci. & Technol., Maine Univ., Orono, ME, USA ; D. Frankel ; R. J. Lad ; K. Nason
more authors

The properties of the SiO2 chemical oxide layer fabricated at the interface between the Si substrate and polysilicon overlayer are critical for obtaining desired electrical response in bipolar polysilicon emitter transistors. The required uniformity in fabricating the layer is achieved by using a wet chemical peroxide bath. In this paper the physical thickness and composition of the chemical oxide is explored. Wet chemistry bath parameters were varied including temperature and hydrogen peroxide concentration. The resulting thickness and composition of the chemical oxide layer were measured using X-ray photoelectron spectroscopy and ellipsometry. The stability of the chemical oxide layers was investigated under ambient conditions. Results indicate that a 1 nm thick chemical oxide film increased to 2 nm in thickness over a 24 hour period in ambient air and that the layer was a mix of stoichiometric SiO2 and intermediary states. During the 24 hour period in ambient air, an increase in carbon contamination was seen. Varying the wet chemistry bath parameters showed that at the highest temperatures, the thickness of the chemical oxide decreased, suggesting that the hydrogen peroxide is rapidly losing potency

Published in:

Advanced Semiconductor Manufacturing Conference and Workshop, 1999 IEEE/SEMI

Date of Conference:

1999