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Micro IDDQ test using Lorentz force MOSFETs

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2 Author(s)
Nose, K. ; Inst. of Ind. Sci., Tokyo Univ., Japan ; Sakurai, T.

A non-disturbing and non-contacting current sensing device, namely LMOS, is proposed and experimentally shown to be effective. The LMOS enables a micro IDDQ test where the current of thousands of small circuit blocks on a chip in identifying the points of design errors and/or small margin. The scheme is helpful and this scheme can become an important debugging tool for the future complex VLSIs that achieve low standby and operation current.

Published in:

VLSI Circuits, 1999. Digest of Technical Papers. 1999 Symposium on

Date of Conference:

17-19 June 1999