Referenced Items are not available for this document.
Intrinsic Josephson junctions were fabricated by silicon (Si) ion implantation into Bi-Sr-Ca-Cu-O (BSCCO) single crystals of 2212 phase grown by the traveling solvent floating zone (TSFZ) method. Si ions with the acceleration energy of 80 keV were implanted into BSCCO. Si-implanted portion of BSCCO turned to insulator and defined junctions precisely. The project range of Si into BSCCO controls thickness of intrinsic junctions. The junction exhibited a typical current-voltage characteristic of the BSCCO intrinsic Josephson junction showing a good uniformity of the critical current and the number of branches is consistent with the depth where Si ions were implanted.
Published in:
Applied Superconductivity, IEEE Transactions on
(Volume:9
,
Issue:
2
)
Date of Publication: June 1999
- Page(s):
- 4515 - 4518
- ISSN :
- 1051-8223
- INSPEC Accession Number:
- 6388509
- Digital Object Identifier :
- 10.1109/77.784029
- Date of Current Version :
- 06 August 2002
- Issue Date :
- June 1999
- Sponsored by :
- The IEEE Council on Superconductivity
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