By Topic

Self-shunted Nb/AlO/sub x//Nb Josephson junctions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Patel, V. ; Dept. of Phys., State Univ. of New York, Stony Brook, NY, USA ; Lukens, J.E.

We describe the fabrication and properties of high critical current density (J/sub c/) Nb/AlO/sub x//Nb Josephson junctions with deep-submicron dimensions. The junctions are fabricated using a planarized process in which all levels are patterned using a combination of optical and electron-beam lithography. The base and counter electrodes are defined by reactive ion etching using quartz etch masks to give a minimum feature size of 0.2 microns. For J/sub c/=2.1 mA//spl mu/m/sup 2/ and junction area less than 0.1 /spl mu/m/sup 2/ the devices are self-shunted and exhibit nonhysteretic I-V characteristics. A small hysteresis in the larger junctions is caused by heating in the electrodes.

Published in:

Applied Superconductivity, IEEE Transactions on  (Volume:9 ,  Issue: 2 )