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Modeling and parameter extraction technique for high-voltage MOS device

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8 Author(s)
T. Myono ; Sanyo Electr. Co. Ltd., Japan ; E. Nishibe ; S. Kikuchi ; K. Iwatsu
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This paper presents a novel technique for modeling HV MOS devices accurately with the BSIM3v3 SPICE model. We assign different meanings from the original BSlM3v3 to three parameters. The simulated I-V characteristics using the extracted parameters match the measured results well, and the physical mechanism of HV MOS devices is clarified based on device simulations. Since our method does not change any model equations of BSIM3v3, it can be applied to any SPICE simulator on which the BSIM3v3 model runs

Published in:

Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on  (Volume:6 )

Date of Conference:

Jul 1999