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An 0.35-μm, 6-m/spl Omega/, 43 μ/spl Omega/-cmsub 2 lateral power MOSFET for low-voltage, megahertz switching power applications

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2 Author(s)
N. X. Sun ; Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA ; A. Q. Huang

Power MOSFET technology has to be improved significantly in order to address the needs of very low voltage power conversion applications such as that powers the future microprocessor. Detailed studies by the author indicate that device technology that is suitable for this type of application is not the conventional vertical power MOSFET technology; instead, a lateral power MOSFET technology based on the VLSI technology is more suitable. We report for the first time the experimental result of a 6-m/spl Omega/, 43 μ/spl Omega/-cm2 lateral power MOSFET based on 0.35-μm VLSI design rule. With a gate-charge of only about 3 nC, in terms of on-resistance gate-charge product, these results are the best ever reported for sub-20-V power MOSFET.

Published in:

IEEE Electron Device Letters  (Volume:20 ,  Issue: 7 )