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We demonstrate for the first time that carbon incorporation in Si epitaxial layers may be an alternative method to deposit enhanced mobility tensile-strained Si MOSFET channel layers directly on a silicon substrate, thereby eliminating the need to deposit a thick relaxed SiGe buffer layer, from which dislocations and other defects can propagate to the channel region. The fabrication and electrical properties of PMOSFETs with Si/sub 1-y/C/sub y/ alloy channel layers are reported in this paper for the first time. It is found that small amounts of C in Si films can produce high quality epitaxial material. PMOSFETs fabricated on these layers demonstrate enhanced hole mobility over that of control Si.
Date of Publication: July 1999