By Topic

Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
S. L. Rommel ; Dept. of Electr. & Comput. Eng., Delaware Univ., Newark, DE, USA ; T. E. Dillon ; P. R. Berger ; P. E. Thompson
more authors

This study presents the room-temperature operation of /spl delta/-doped Si resonant interband tunneling diodes which were fabricated by low-temperature molecular beam epitaxy. Post growth rapid thermal annealing of the samples was found to improve the current-voltage (I-V) characteristics. Optimal performance was observed for a 600/spl deg/C 1 min anneal, yielding a peak-to-valley current ratio (PVCR) as high as 1.38 with a peak current density (J/sub p/) as high as 1.42 kA/cm/sup 2/ for a device with a 4-nm intrinsic Si tunnel barrier. When the tunnel barrier was reduced to 2 nm, a PVCR of 1.41 with a J/sub p/ as high as 10.8 kA/cm/sup 2/ was observed. The devices withstood a series of burn-in measurements without noticeable degradation in either the J/sub p/ or PVCR. The structures presented are strain-free, and are compatible with a standard CMOS or HBT process.

Published in:

IEEE Electron Device Letters  (Volume:20 ,  Issue: 7 )