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A zero DC-power low-distortion mixer for wireless applications

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2 Author(s)
J. J. Kucera ; Lab. for EM Fields & Microwave Electron., Eidgenossische Tech. Hochschule, Zurich, Switzerland ; U. Lott

A fully integrated passive field-effect transistor (FET) mixer with a measured conversion loss of 7 dB and a -1 dB input compression point of -1.5 dBm at 1.9 GHz was fabricated in a standard 0.6 μm GaAs MESFET process. Zero DC-power consumption, excellent dynamic performance, and low loss make this circuit very suitable for low-power low-voltage wireless applications.

Published in:

IEEE Microwave and Guided Wave Letters  (Volume:9 ,  Issue: 4 )