By Topic

High-voltage CdSe-Ge TFT driver circuits for passive AC-TFEL displays

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
De Vos, J. ; Dept. of Electron. & Inf. Syst., Ghent Univ., Belgium ; De Smet, H. ; De Cubber, A.M. ; Van Calster, A.

Since an electroluminescent display (ELD) is a capacitive display driven at high voltage, it is necessary to fabricate high-voltage, large-current drivers. It is shown that a 20-μm complementary CdSe-Ge thin-film transistor technology can be used to integrate the high-voltage section of the drive circuits on the substrate of an ELD. The realized column driver levels a 15 V CMOS signal up to a modulation voltage of 50 V. A novel tristate row driver circuit, which is based on the symmetric character of the thin-film transistor, handles row selecting voltages of about 200 V together with current pulses of approximately 100 mA. In this paper, the design, simulation, and measurement of these circuits are described. Technology problems due to high voltages were solved

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:34 ,  Issue: 2 )