Referenced Items are not available for this document.
A preamplifier for 40-Gb/s optical transmission systems incorporating AlGaAs/InGaAs heterojunction bipolar transistors (HBTs) with p+ regrown extrinsic base layers is described. The HBTs have a heavily doped regrown p+-GaAs layer in the extrinsic base regions and a thin graded InGaAs strained layer for the intrinsic base. Their measured peak fmax is above 200 GHz. The developed preamplifier provides a bandwidth of 38.4 GHz and a transimpedance gain of 41.1 dB Ω. Moreover, the frequency response as an optical receiver has a bandwidth of 32 GHz. These characteristics make the preamplifier suitable for use in a 40-Gb/s optical receiver. These results show that AlGaAs/InGaAs HBTs with p+ regrown extrinsic base layers are very promising for use in 40-Gb/s optical transmission systems
Published in:
Solid-State Circuits, IEEE Journal of
(Volume:34
,
Issue:
2
)
Date of Publication: Feb 1999
- Page(s):
- 143 - 147
- ISSN :
- 0018-9200
- INSPEC Accession Number:
- 6164775
- Digital Object Identifier :
- 10.1109/4.743756
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Feb 1999
- Sponsored by :
- IEEE Solid-State Circuits Society
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