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Phase noise characteristics associated with low-frequency noise in submicron SOI MOSFET feedback oscillator for RF IC's

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7 Author(s)
Ying-Che Tseng ; Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA ; Huang, W.M. ; Spears, E. ; Spooner, D.
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Phase noise in silicon-on-insulator (SOI) MOSFET feedback oscillators for RF IC applications is investigated. The observed correlation between the oscillator's high frequency phase noise and the transistor's low-frequency noise characteristics demonstrates that the phase noise overshoot still exists in partially-depleted (PD) floating body SOI nMOS Colpitts oscillators. These results suggest that kink-induced effects associated with low-frequency components of the signal are upconverted into the ideally kink-free high frequency domain operation mode of PD floating body SOI oscillators.

Published in:

Electron Device Letters, IEEE  (Volume:20 ,  Issue: 1 )