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Single-voltage-supply operation of insulated-gate FETs using Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As heterostructures for power application was demonstrated for the first time. It is found that the device can be operated with gate voltage up to 2 V without significant drain current compression. Because of this high gate operating voltage, single-voltage-supply operation of Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As insulated-gate FETs was achieved. Preliminary results show that for a 1-/spl mu/m gate length device operated at 1.8 GHz under class A-bias condition, this power FET showed a 14.5-dBm (140 mW/mm) saturated power with a power added efficiency of 30% when the drain voltage is 4.8 V.