Referenced Items are not available for this document.
Single-voltage-supply operation of insulated-gate FETs using Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As heterostructures for power application was demonstrated for the first time. It is found that the device can be operated with gate voltage up to 2 V without significant drain current compression. Because of this high gate operating voltage, single-voltage-supply operation of Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As insulated-gate FETs was achieved. Preliminary results show that for a 1-/spl mu/m gate length device operated at 1.8 GHz under class A-bias condition, this power FET showed a 14.5-dBm (140 mW/mm) saturated power with a power added efficiency of 30% when the drain voltage is 4.8 V.
Published in:
Electron Device Letters, IEEE
(Volume:20
,
Issue:
1
)
Date of Publication: Jan. 1999
- Page(s):
- 21 - 23
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 6138520
- Digital Object Identifier :
- 10.1109/55.737561
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Jan. 1999
- Sponsored by :
- IEEE Electron Devices Society
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