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In-situ gate oxide/electrode deposition for a 0.5 μm BiCMOS process flow

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2 Author(s)
Carbone, T.A. ; Fairchild Semicond., South Portland, ME, USA ; Solomon, G.

A method of depositing the gate oxide and electrode in a single chamber for BiCMOS processing is discussed. The advantages of the deposition of in situ gate electrode (DIGE) over the conventional two step oxidation and polycrystalline silicon deposition is related to cycle time and increased gate oxide integrity. TEM images and a correlation to metrology measurements are presented

Published in:

Advanced Semiconductor Manufacturing Conference and Workshop, 1998. 1998 IEEE/SEMI

Date of Conference:

23-25 Sep 1998

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