Scheduled System Maintenance:
Some services will be unavailable Sunday, March 29th through Monday, March 30th. We apologize for the inconvenience.
By Topic

In-situ gate oxide/electrode deposition for a 0.5 μm BiCMOS process flow

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
2 Author(s)
Carbone, T.A. ; Fairchild Semicond., South Portland, ME, USA ; Solomon, G.

A method of depositing the gate oxide and electrode in a single chamber for BiCMOS processing is discussed. The advantages of the deposition of in situ gate electrode (DIGE) over the conventional two step oxidation and polycrystalline silicon deposition is related to cycle time and increased gate oxide integrity. TEM images and a correlation to metrology measurements are presented

Published in:

Advanced Semiconductor Manufacturing Conference and Workshop, 1998. 1998 IEEE/SEMI

Date of Conference:

23-25 Sep 1998