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High-speed heterostructure photodetectors characterisation

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3 Author(s)
M. Tombska ; Dept. of Microelectron., Slovak Univ. of Technol., Bratislava, Slovakia ; F. Uherek ; J. Jakabovic

A measurement set-up for high-speed photodetector properties investigation in frequency domain up to 20 GHz is described. Using this set-up, heterostructure photodetectors were characterised employing microwave reflection coefficient and/or optoelectronic transmission coefficient measurements. The equivalent circuit of the photodetector device was identified from microwave reflection coefficient measurements. Transmission measurements and simulations of photodetector were performed and compared in time and/or frequency domain

Published in:

Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on

Date of Conference:

5-7 Oct 1998