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Ultrahigh Al Schottky barrier to p-Si

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4 Author(s)
Horvath, Z.J. ; Res. Inst. for Tech. Phys., Hungarian Acad. of Sci., Budapest, Hungary ; Adam, M. ; Van Tuyen, V. ; Ducso, Cs.

The possibility of barrier height enhancement of Schottky junction on p-type Si was studied by using a chemical passivation procedure. Schottky barrier heights up to 0.91 eV have been obtained, due probably to the unpinning of the Fermi-level at the Al/Si interface. It is probably the highest barrier height value published so far for a solid-state Schottky junction prepared on p-Si

Published in:

Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on

Date of Conference:

5-7 Oct 1998