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Improvements on a GaAs MESFET model for nonlinear RF simulations

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3 Author(s)
Ellinger, F. ; Lab. for Electromagn. Fields & Microwave Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland ; Kucera, J. ; Baechtold, W.

A modified GaAs MESFET-model has been developed to improve accuracy over a large bias range, particularly within the linear region. The enhancements consist of a modified Statz equation for the gate charge to improve the modeling of the gate drain capacitance, and an equation for the bias dependent drain source resistance for exact modeling of the dispersive output conductance.

Published in:

Microwave Symposium Digest, 1998 IEEE MTT-S International  (Volume:3 )

Date of Conference:

7-12 June 1998