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W-band on-wafer load-pull measurement system and its application to HEMT characterization

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3 Author(s)
Alekseev, E. ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; Pavlidis, D. ; Tsironis, C.

An on-wafer large-signal characterization system has been developed for W-band frequency applications. The system is computer-controlled and employs a high-precision electromechanical W-band tuner. Its application to obtaining constant output power and gain contours as well as power saturation characteristics of submicron InP-based HEMTs is demonstrated at 77 GHz and 102 GHz.

Published in:

Microwave Symposium Digest, 1998 IEEE MTT-S International  (Volume:3 )

Date of Conference:

7-12 June 1998

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