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Analysis and optimization of accumulation-mode varactor for RF ICs

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5 Author(s)
Soorapanth, T. ; Center for Integrated Syst., Stanford Univ., CA, USA ; Yue, C.P. ; Shaeffer, D.K. ; Lee, T.I.
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This paper presents a novel RF IC varactor implemented in a standard CMOS process. This device has shown a remarkable tuning range of 150%, sensitivity of 300%/V, and quality factor of 23 at 1 GHz. A physical model of the varactor is presented and confirmed with measured data. Using the model derived, optimization has shown that a Q as high as 200 can be achieved.

Published in:

VLSI Circuits, 1998. Digest of Technical Papers. 1998 Symposium on
RFIC Virtual Journal, IEEE

Date of Conference:

11-13 June 1998