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Monolithic super-bright red resonant cavity light-emitting diode grown by solid source molecular beam epitaxy

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6 Author(s)
Jalonen, M. ; Dept. of Phys., Tampere Univ. of Technol., Finland ; Kongas, J. ; Toivonen, M. ; Savolainen, P.
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Monolithic super-bright resonant-cavity light-emitting diode operating at /spl lambda/=663 nm has been developed. The diode consisted of a 1/spl lambda/-thick AlGaInP active region sandwiched between AlAs-AlGaAs distributed Bragg reflectors. The device structure was grown by solid source molecular beam epitaxy. The current aperture of the emitter was created by lateral selective wet thermal oxidation. A record-high peak wall-plug efficiency of 2.2% and a continuous-wave output power of 1.4 mW were attained without heatsinking at room temperature from a diode having a diameter of 80 μm. The emission linewidth was as narrow as 4.5 nm.

Published in:

Photonics Technology Letters, IEEE  (Volume:10 ,  Issue: 7 )