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Single photonics: turnstile device and solid-state photomultiplier

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4 Author(s)
Y. Yamamoto ; Edward L. Ginzton Lab., Stanford Univ., CA, USA ; J. Kim ; O. Benson ; H. Kan

Summary form only given. We discuss recent progress in two single-photonic devices: a single-photon turnstile device and a solid-state photomultiplier. A single photon turnstile device is based on the simultaneous Coulomb-blockade effect for electrons and holes in a mesoscopic, double barrier, pn-tunnel junction. By periodically modulating the bias voltage between the electron and hole resonant tunneling conditions, we can periodically inject a single electron and a single hole into the central island, which will be followed by single-photon emission. A double-barrier GaAs-AlGaAs pn-tunnel junction wafer is grown by molecular beam epitaxy.

Published in:

Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International

Date of Conference:

8-8 May 1998