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Temperature-dependent emissivity of silicon-related materials and structures

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6 Author(s)
N. M. Ravindra ; Dept. of Phys., New Jersey Inst. of Technol., Newark, NJ, USA ; S. Abedrabbo ; Wei Chen ; F. M. Tong
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The results of an ongoing collaborative project between the New Jersey Institute of Technology (NJIT) and SEMATECH on the temperature-dependent emissivity of silicon-related materials and structures are presented in this study. These results have been acquired using a spectral emissometer. This emissometer consists of a Fourier Transform Infra-Red (FTIR) spectrometer designed specifically to facilitate simultaneous measurements of surface spectral emittance and temperature by using optical techniques over the near- and mid-IR spectral range and temperatures ranging from 300 K to 2000 K. This noncontact, real-time technique has been used to measure radiative properties as a function of temperature and wavelength for a wide range of silicon-related materials and structures. The first results of the temperature and wavelength dependent emissivity and hence refractive index of silicon nitride, in the literature, is presented in this study

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IEEE Transactions on Semiconductor Manufacturing  (Volume:11 ,  Issue: 1 )