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Temperature-dependent emissivity of silicon-related materials and structures

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6 Author(s)
Ravindra, N.M. ; Dept. of Phys., New Jersey Inst. of Technol., Newark, NJ, USA ; Abedrabbo, S. ; Wei Chen ; Tong, F.M.
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The results of an ongoing collaborative project between the New Jersey Institute of Technology (NJIT) and SEMATECH on the temperature-dependent emissivity of silicon-related materials and structures are presented in this study. These results have been acquired using a spectral emissometer. This emissometer consists of a Fourier Transform Infra-Red (FTIR) spectrometer designed specifically to facilitate simultaneous measurements of surface spectral emittance and temperature by using optical techniques over the near- and mid-IR spectral range and temperatures ranging from 300 K to 2000 K. This noncontact, real-time technique has been used to measure radiative properties as a function of temperature and wavelength for a wide range of silicon-related materials and structures. The first results of the temperature and wavelength dependent emissivity and hence refractive index of silicon nitride, in the literature, is presented in this study

Published in:

Semiconductor Manufacturing, IEEE Transactions on  (Volume:11 ,  Issue: 1 )

Date of Publication:

Feb 1998

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