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High-power low-divergence semiconductor lasers for GaAs-based 980-nm and InP-based 1550-nm applications

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4 Author(s)
Heonsu Jeon ; SDL Inc., San Jose, CA, USA ; Verdiell, J.-M. ; Ziari, M. ; Mathur, A.

High-power diode lasers with low-vertical divergence and high-fiber coupling efficiency were developed for GaAs-based 980-nm pump lasers and InP-based 1550-nm Fabry-Perot and distributed-feedback (DFB) lasers. Narrow divergence at 980 nm was made possible by a large optical-mode waveguide design, with full-width at half-maximum (FWHM) far-field angles of 11.7°×17.8° and coupling efficiency of 80% into a cleaved single-mode fiber (SMF). A vertical taper processing technique was developed for InP-based laser structures. Fabry-Perot lasers produced over 90-mW output power, 17°×16° FWHM beam divergence angles, and 63% coupling efficiency into a lensed SMF. The vertical taper was successfully integrated in 1550-nm DFB lasers, and over 80 mW single-mode output power with beam divergence angles of 12°×14° was obtained

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:3 ,  Issue: 6 )