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High quality AlGaSb, AlGaAsSb and InGaAsSb epitaxial layers grown by liquid-phase epitaxy from Sb-rich melts

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5 Author(s)
Deryagin, A.G. ; A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia ; Faleev, N.N. ; Smirnov, V.M. ; Sokolovskii, G.S.
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The paper is concerned with the study of the growth of AlGaSb, AlGaAsSb and InGaAsSb epilayers, which are lattice-matched to GaSb, by means of liquid-phase epitaxy (LPE) from Sb-rich melts. The obtained composition ranges were 0.02⩽x⩽0.20 for AlxGa1-x Sb, AlxGa1-xAsySb1-x epilayers and 0.04⩽x⩽0.24 for InxGa1-xAs ySb1-y layers. In the photoluminescence spectra measured on AlGaSb and GaInAsSb direct-gap solid solutions, only peaks with a maximum corresponding to the bandgap were observed. No long-wavelength peaks, which correspond to defects such as VGa+GaSb and are typical of GaSb and related solid solutions grown from In- or Ga-rich melts, were found in PL spectra of the epilayers obtained

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Optoelectronics, IEE Proceedings -  (Volume:144 ,  Issue: 6 )