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A novel approach to monitoring of plasma processing equipment and plasma damage without test structures

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7 Author(s)
Hoff, A. ; Center for Microelectron. Res., Univ. of South Florida, Tampa, FL, USA ; Nauka, K. ; Esry, T. ; Persson, E.
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Routine monitoring of oxide charging in IC manufacture requires real-time evaluation of the results of plasma processes. Whole-wafer images of dielectric charging produced by plasma exposure and generated by a new diagnostic tool using reusable oxidized wafers, are shown to be effective tools in the correlation of plasma and equipment characteristics to charging

Published in:

Advanced Semiconductor Manufacturing Conference and Workshop, 1997. IEEE/SEMI

Date of Conference:

10-12 Sep 1997