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We propose an epitaxial punchthrough diode for bipolar resistance RAM (RRAM) selector application. Epitaxial Si:C process is used to deposit n+/p/n+ layers which are fabricated into 300-nm-diameter vertical punchthrough diodes. High on-current density of >; 1 MA/cm2 and high on/off current ratio of >; 250 and >; 4700 (at opposite polarities) are observed. A switching speed of <; 10 ns is measured. On-voltage designability is demonstrated by tuning the p-region doping and length. The comparison of experimental IV with Sentaurus TCAD-simulated IV characteristics confirms the punchthrough mechanism. Comparison with other bipolar RRAM selector technologies highlights the overall advantages of punchthrough-based selector.