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550 ^{\circ}\hbox {C} Integrated Logic Circuits using 6H-SiC JFETs

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5 Author(s)
Chia-Wei Soong ; Dept. of Electr. Eng. & Comput. Sci., Case Western Reserve Univ., Cleveland, OH, USA ; Patil, A.C. ; Garverick, S.L. ; Xiaoan Fu
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This letter reports the design, fabrication, and electrical characteristics of inverter, NAND, and NOR logic circuits using 6H-silicon carbide (SiC) depletion-mode junction field-effect transistors. All circuits function with high performance at temperatures from 25 °C to 550 °C. The core inverter has an outstanding dc characteristic transfer function with a steep slope, including a gain of >; -20 up to 500 °C, and a logic threshold that is well centered in the logic swing. NOR and NAND gates were likewise tested in this temperature range, and dynamic characteristics are presented. This SiC technology provides a platform for applications demanding reliable digital circuits at temperatures higher than 300 °C, well beyond the capability of silicon technology.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 10 )