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High-Performance Inverted \hbox {In}_{0.53} \hbox {Ga}_{0.47}\hbox {As} MOSHEMTs on a GaAs Substrate With Regrown Source/Drain by MOCVD

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4 Author(s)
Qiang Li ; Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China ; Xiuju Zhou ; Chak Wah Tang ; Kei May Lau

We report inverted-type In0.51Al0.49As/In0.53Ga0.47As MOSHEMTs heteroepitaxially grown on GaAs substrates by metal-organic chemical vapor deposition. High 2-D electron gas Hall mobility values of 8200 cm2/V · s at 300 K and 33 900 cm2/V · s at 77 K have been achieved. The buried quantum-well channel design is combined with selectively regrown source/drain (S/D) using a gate-last process. A 120-nm-channel-length MOSHEMT exhibited a maximum drain current of 1884 mA/mm, peak transconductance of 1126 mS/mm at Vds = 0.5 V, and a subthreshold slope of 135 mV/dec at Vds = 0.05 V. With the regrown S/D, an ultralow on-state resistance of 156 Ω·μm was obtained.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 9 )